The book 'Microelectronics and Optoelectronics Technology' is intended to be used as a textbook for B.E./B.Tech. degree courses in ECE, ETCE, El. This book contains almost the full syllabus of 4th semester of West Bengal Technology University. This book also serves as a reference book for M.Tech. (VLSI & Microelectronics). This book is mainly written for the final year of undergraduate and graduate students in physics, materials science and several kinds of engineerings (electrical, materials, etc.) with the objective in mind that it could be used in one semester. This book includes the fundamental concept of Semiconductor Device Physics: Change transport phenomenon, Continuity equations, Non-Equilibrium Excess carriers in semiconductor, Surface effects, Change storage and diode transients; Contact (Ohmic and Non-Ohmic contacts, their respective band bending under different biasing condition). Semiconductor Hetero Junctions: Energy band diagram, 2-D electron gas, Current Voltage Characterization, High electron mobility. Sub Micron MOSFET: MOSFET Scaling; Short channel effect, Ballistic transport, Sub threshold conduction, Vertical power MOSFET structure and characterization, Insulated gate Bipolar, transistor. Charge Transfer Devices: Dynamic effects in MOS capacitors, Basic Application of CCD, Thin film Transistors. MEMS- Micromachining of Silicon, bulk and surface Micromachining piezo sensitive MEMS pressure sensors. This existing area promises to open up many new areas for microfabrication. The aim of this book is to provide strong foundation of basic principles of the Micro-Opto Devices by very simpliest language to the students. About The Author: Saradindu Panda obtained his B.E. from the University Institute of Technology Engineering College, University of Burdhwan in the year 2004. He received his M.Tech. in VLSI Design and Microelectronics Tech
Additional Info
  • Publisher: Laxmi Publications
  • Language: English
  • ISBN : 978-81-318-0738-5
  • Chapter 1

    Semiconductor Fundamentals Price 2.99  |  2.99 Rewards Points

    To understand the fundamental concepts of semiconductors, one must apply modern physics to solid materials. More specifically, we are interested in semiconductor crystals. Crystals are solid materials consisting of atoms, which are placed in a highly ordered structure called a lattice. Such a structure yields a periodic potential throughout the material, which results in some remarkable properties.
  • Chapter 2

    Carrier Transport Price 2.99  |  2.99 Rewards Points

    Any motion of free carriers in a semiconductor leads to a current. This motion can be caused by an electric field due to an externally applied voltage, since the carriers are charged particles. We will refer to this transport mechanism as carrier drift. In addition, carriers also move from regions where the carrier density is high to regions where the carrier density is low. This carrier transport mechanism is due to the thermal energy and the associated random motion of the carriers. We will refer to this transport mechanism as carrier diffusion. The total current in a semiconductor equals the sum of the drift and the diffusion current.
  • Chapter 3

    Metal-Semiconductor Junctions Price 2.99  |  2.99 Rewards Points

    Metal-to-semiconductor contacts are of great importance since they are present in every semiconductor device. They can behave either as a Schottky barrier or as an ohmic contact dependent on the characteristics of the interface. This chapter contains an analysis of the electrostatics of the M-S junction (i.e., the charge, field and potential distribution within the device) followed by a derivation of the current voltage characteristics due to diffusion, thermionic emission and tunneling and a discussion of the non-ideal effects in Metal- Semiconductor junctions.
  • Chapter 4

    MOS Capacitors Price 2.99  |  2.99 Rewards Points

    The primary reason to study the Metal-Oxide-Silicon (MOS) capacitor is to understand the principle of operation as well as the detailed analysis of the Metal-Oxide-Silicon Field Effect Transistor (MOSFET). In this chapter, we introduce the MOS structure and its four different modes of operation, namely accumulation, flatband, depletion and inversion. We then consider the flatband voltage in more detail and present the MOS analysis based on the full depletion approximation. Finally, we analyze and discuss the MOS capacitance.
  • Chapter 5

    MOS Field-Effect- Transistors Price 2.99  |  2.99 Rewards Points

    The n-type Metal-Oxide-Semiconductor Field-Effect-Transistor (nMOSFET) consists of a source and a drain, two highly conducting n-type semiconductor regions, which are isolated from the p-type substrate by reversed-biased p-n diodes. A metal or polycrystalline gate covers the region between source and drain. The gate is separated from the semiconductor by the gate oxide.
  • Chapter 6

    Optoelectronic Devices Price 2.99  |  2.99 Rewards Points

    Optoelectronics deals with the interaction of electronic processes with light and optical processes. Devices in which such interaction can suitably take place, usually accompanied by an energy conversion process (e.g., from electrical to optical, and vice versa), are called optoelectronic devices. Such devices are conveniently made by the semiconductors.
  • Chapter 7

    MEMS Price 2.99  |  2.99 Rewards Points

    MEMS means Micro Electro Mechanical Sensors. It is very much applicable in automobiles industries and domestic purposes. The MEMS are mainly depends on stress & strain of the materials by which it is made.
  • Chapter 8

    Heterojunction, TED and Power MOSFET Price 2.99  |  2.99 Rewards Points

    A heterojunction is formed when two semiconductors with different bandgaps and lattice constants are brought together, usually by epitaxy. Heterojunctions form essential constituents of almost all electronic and optoelectronic devices.

About the Author

Not available